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| Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4295 Q67040-S4298 Marking 11N60C2 11N60C2 11N60C2 P-TO220-3-31 Q67040-S4332 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 C TC = 100 C A 11 7 111) 71) 22 340 0.6 11 6 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR 22 340 0.6 11 6 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 11 A, VDS < VDD , di/dt=100A/s, Tjmax =150C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 125 33 Operating and storage temperature Page 1 Tj , Tstg -55...+150 C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP11N60C2, SPB11N60C2 SPA11N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 1 3.8 62 80 62 1 0.26 260 K/W W/K C Tsold - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID =0.5mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.34 0.86 25 250 100 0.38 nA Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=7A, Tj=25C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A Symbol Conditions min. Values typ. 6 1460 610 21 45 85 13 40 48 9 10.5 24 41.5 8 Unit max. 72 13.5 54 V nC gfs Ciss Coss Crss VDS 2*ID *RDS(on)max, ID =7A VGS =0V, VDS =25V, f=1MHz 3 - S pF Effective output capacitance, 4) Co(er) VGS =0V, VDS =0V to 480V td(on) tr td(off) tf VDD =380V, VGS =0/13V, ID =11A, RG=6.8, Tj=125C - ns V(plateau) VDD =350V, ID =11A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt Tj=25C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/s Symbol Conditions min. Values typ. 1 650 7.9 30 600 max. 11 22 1.2 1105 - Unit IS ISM TC=25C - A V ns C A A/s Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.034 0.042 0.116 0.149 0.059 Value SPA 0.015 0.03 0.043 0.119 0.35 2.499 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Unit Symbol Value SPP_B 0.0002121 0.0007091 0.001184 0.001527 0.011 0.089 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412 Unit Ws/K Tj P tot (t) R th1 E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 1 Power dissipation Ptot = f (TC ) SPP11N60C2 2 Power dissiaption FullPAK Ptot = f (TC ) 35 140 W W 120 110 100 25 Ptot 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 P tot 20 15 10 5 C 160 0 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 2 4 Safe operating area FullPAK ID = f (VDS ) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 10 V VDS 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Page 5 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 5 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp ) parameter: D = tp/t 10 1 K/W 10 0 K/W 10 0 ZthJC 10 -1 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 Helvetica tp 7 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 35 20V 8 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 18 A 12V 10V A 20V 12V 10V 9V 8V 14 12 10 8 7V 25 ID 20 9V 15 8V ID 10 6 4 5 7V 6V 2 6V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Page 6 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 9 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 2 10 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 7 A, VGS = 10 V 2.1 SPP11N60C2 1.8 RDS(on) 1 RDS(on) 1.6 1.4 1.2 0.5 20V 12V 10V 9V 8V 7V 6V 1 0.8 0.6 98% 0.4 0.2 typ 0 0 2 4 6 8 10 12 14 A ID 18 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 32 12 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 16 SPP11N60C2 A V 24 12 0,2 VDS max 20 V GS 0,8 VDS max ID 25 C 150 C 10 16 8 12 6 8 4 4 2 0 0 4 8 12 V 20 0 0 10 20 30 40 50 nC 65 VGS QGate Page 7 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 13 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP11N60C2 14 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, RG =6.8 10 3 A ns tr 10 1 10 2 IF t td(off) tf 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 10 1 td(on) 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 5 10 15 20 A ID 30 VSD 15 Typ. switching time t = f (RG), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, ID=11 A 10 3 16 Typ. switching losses E = f (ID ), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =6.8 0.7 *) Eon includes SDP06S60 diode commutation losses. ns td(off) td(on) mWs 10 2 tr 0.5 E 0.4 tf t 0.3 10 1 0.2 Eoff Eon* 0.1 10 0 0 10 20 30 40 50 RG 70 0 0 5 10 15 A ID 25 Page 8 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 17 Typ. switching losses E = f(RG ), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V,ID =11A 0.4 *) E on includes SDP06S60 diode commutation losses. 18 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 11 A 9 8 mWs IAR Eoff 0.2 E 7 6 5 4 Tj (START)=25C Eon* 0.1 3 2 1 Tj (START)=125C 0 0 10 20 30 40 50 RG 70 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR 19 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V 350 20 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP11N60C2 720 mJ V V (BR)DSS C 680 660 640 620 600 250 E AS 200 150 100 580 50 560 0 20 540 -60 40 60 80 100 120 160 -20 20 60 100 C 180 Tj Page 9 Tj 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 21 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ 300 22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF W 10 3 Ciss P AR 200 C 150 10 2 Coss 100 10 1 50 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 400 V 600 VDS 23 Typ. Coss stored energy Eoss=f(VDS ) J 7.5 6 5.5 E oss 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 10 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Definition of diodes switching characteristics Page 11 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 0.2 0...0.3 8.5 1) A 1.27 0.1 B 0.1 2.4 1 0.3 0.05 (15) 9.25 0.2 7.55 1) 0...0.15 0.75 0.1 1.05 2.54 5.08 1) 4.7 0.5 2.7 0.3 0.5 0.1 8 MAX. 0.25 M AB 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 9.98 0.48 0.05 Page 12 2002-08-12 Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO-220-3-31 (FullPAK) 10.5 0.005 6.1 0.002 1.5 0.001 4.7 0.005 2.7 0.005 7 15.99 0.005 14.1 0.005 12.79 0.005 9.68 0.005 123 1.28 +0.003 -0.002 0.7 +0.003 -0.002 2.54 2.57 0.002 13.6 0.005 0.5 +0.005 -0.002 Please refer to mounting instructions (application note AN-TO220-3-31-01) 3.3 0.005 Page 13 2002-08-12 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP11N60C2, SPB11N60C2 SPA11N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2002-08-12 |
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